Nonvolatile memory device with vertical string including semiconductor and resistance change layers, and method of operating the same

ABSTRACT

A nonvolatile memory device and a method of operating the same are provided. The nonvolatile memory device may include a memory cell array having a vertical stack-type structure, a control logic, and a bit line. The memory cell array may include memory cells that each include corresponding portions of a semiconductor layer and a resistance change layer. The control logic, in a read operation, may be configured to apply a first voltage to a non-select memory cell and a second voltage to a non-select memory cell. The first voltage turns on current only in the semiconductor layer portion of the non-select memory cell. The second voltage turns on current in both the semiconductor layer and resistance change layer portions of the select memory cell. The bit line may be configured to apply a read voltage to the select memory cell during the read operation.

CROSS-REFERENCE TO RELATED APPLICATION

This application claims the benefit of Korean Patent Application No.10-2019-0093430, filed on Jul. 31, 2019, in the Korean IntellectualProperty Office, the disclosure of which is incorporated herein in itsentirety by reference.

BACKGROUND 1. Field

The present disclosure relates to nonvolatile memory devices and methodsof operating the same.

2. Description of Related Art

As a semiconductor memory device, a nonvolatile memory device includes aplurality of memory cells that maintain information even when power isturned-off and, when power is supplied, the stored information may beused. As an example of a nonvolatile memory device, the nonvolatilememory device may be used in a mobile phone, a digital camera, aportable digital assistant (PDA), a mobile computer device, a fixedcomputer device, and other devices.

Recently, studies have been conducted about using a three-dimensional(or vertical) NAND (VNAND) on a chip that forms a next-generationneuromorphic computing platform or a neural network.

In particular, there is a need to develop a technology having a highintegrated low power characteristic and allowing random access to amemory cell.

SUMMARY

Provided are nonvolatile memory devices in which resistance states maybe distributed in a linear scale form and methods of operating thenonvolatile memory devices.

Additional aspects will be set forth in part in the description whichfollows and, in part, will be apparent from the description, or may belearned by practice of the presented embodiments of the disclosure.

According to an aspect of an embodiment, a memory device includes amemory cell array, a control logic, and a bit line. The memory cellarray has a vertical stack-type structure including a semiconductorlayer and a resistance change layer. The memory cell array includes aplurality of memory cells that each include a corresponding portion ofthe semiconductor layer and a corresponding portion of the resistancechange layer. The control logic, in a read operation, is configured toapply a first voltage to a non-select memory cell and the first voltagehas a level to turn on current only in the corresponding portion of thesemiconductor layer of the non-select memory cell. The control logic,during the read operation, is configured to apply a second voltage to aselect memory cell and the second voltage has a level to turn on currentin both the corresponding portion of the semiconductor layer and thecorresponding portion of the resistance change layer of the selectmemory cell. The non-select memory cell and the select memory cell areamong the plurality of memory cells of the memory cell array. The bitline is connected to the memory cell array. The bit line is configuredto apply a read voltage to the select memory cell during the readoperation.

In some embodiments, an absolute value of the second voltage may be lessthan an absolute value of the first voltage.

In some embodiments, the absolute value of the second voltage may begreater than an absolute value of a third voltage. The third voltage mayhave a level to turn on current in the corresponding portion of theresistance change layer, based on the control logic applying the thirdvoltage to the select memory cell.

In some embodiments, the control logic, in a program operation, may beconfigured to apply the first voltage to the non-select memory cell toturn on current only in the corresponding portion of the semiconductorlayer of the non-select memory cell. The control logic, in the programoperation, may be configured to apply the second voltage to the selectmemory cell to turn on current in both the corresponding portion of thesemiconductor layer and the corresponding portion of the resistancechange layer of the select memory cell. The bit line may be configuredto apply a program voltage to the select memory cell during the programoperation.

In some embodiments, the second voltage may have a magnitude so that thecorresponding portion of the semiconductor layer of the select memorycell may have a resistance magnitude in a range of 10⁴Ω through 10¹²Ω,based on the control logic applying the second voltage to the selectmemory cell.

In some embodiments, the second voltage may have a magnitude so that aratio of a maximum value to a minimum value of a composite resistance ofthe corresponding portion of the semiconductor layer and thecorresponding portion of the resistance change layer of the selectmemory cell may be 10 or less, based on the control logic applying thesecond voltage to the select memory cell.

In some embodiments, the second voltage may have a magnitude so that aresistance of the corresponding portion of the semiconductor layercorresponding of the select memory cell may be equal to or greater thana minimum resistance of the corresponding portion of the resistancechange layer of the select memory cell, based on the control logicapplying the second voltage to the select memory cell.

In some embodiments, the second voltage may have a magnitude so that aresistance of the corresponding portion of the semiconductor layercorresponding of the select memory cell may be equal to or less than amaximum resistance of the corresponding portion of the resistance changelayer corresponding to the select memory cell, based on the controllogic applying the second voltage to the select memory cell.

In some embodiments, the corresponding portion of the semiconductorlayer and the corresponding portion of the resistance change layer ofthe select memory cell may have a parallel connection structure.

In some embodiments, the memory cell array may include the semiconductorlayer extending in a first direction, a plurality of gates and aplurality of insulating layers extending in a second directionperpendicular to the first direction and alternately disposed to eachother, a gate insulating layer, and the resistance change layerextending in the first direction on the semiconductor layer. The gateinsulating layer may extend in the first direction between the pluralityof gates, the plurality of insulating layers, and the semiconductorlayer.

In some embodiments, the resistance change layer contacts thesemiconductor layer.

In some embodiments, the resistance change layer may be spaced apartfrom the gate insulating layer with the semiconductor layertherebetween.

In some embodiments, the resistance change layer may include a materialin which a resistance is changed by a phenomenon of oxygen vacancies ora current conduction mechanism by trap/detrap of electrons.

In some embodiments, the resistance change layer may include one or moretransition metal oxides, one or more transition metal nitrides, or boththe one or more transition metal oxides and one or more transition metalnitrides.

According to an aspect of an embodiment, a method of operating anon-volatile memory device includes: applying a first voltage to anon-select memory cell among a plurality of memory cells of a memorycell array, applying a second voltage to a select memory cell among theplurality of memory cells of the memory cell array, and applying a readvoltage to the select memory cell of the memory cell array. The memorycell array has a vertical stack-type structure including a semiconductorlayer and a resistance change layer. Each of the plurality of memorycells includes a corresponding portion of the semiconductor layer and acorresponding portion of the resistance change layer. The first voltagehas a level to turn on current only in the corresponding portion of thesemiconductor layer of the non-select memory cell. The second voltagehas a level to turn on current in both the corresponding portion of thesemiconductor layer and the corresponding portion of resistance changelayer of the select memory cell.

In some embodiments, an absolute value of the second voltage may be lessthan an absolute value of the first voltage.

In some embodiments, an absolute value of the second voltage may begreater than a third voltage. The third voltage may have a level to turnon current in the corresponding portion of the resistance change layerof the select memory cell of the memory cell array, based on applyingthe third voltage to the select memory cell.

In some embodiments, the second voltage may have a magnitude so that aratio of a maximum value to a minimum value of a composite resistance ofthe corresponding portion of the semiconductor layer and thecorresponding portion of the resistance change layer of the selectmemory cell may be 10 or less, based on applying the second voltage tothe select memory cell.

In some embodiments, the second voltage may have a magnitude so that aresistance of the corresponding portion of the semiconductor layer ofthe select memory cell may be equal to or greater than the minimumresistance of the corresponding portion of the resistance change layerof the select memory cell, based on applying the second voltage to theselect memory cell.

In some embodiments, the corresponding portion of the semiconductorlayer and the corresponding portion of the resistance change layer ofthe selected memory cell have a parallel connection structure.

According to an aspect of an embodiment, a memory device may include asubstrate, a plurality of cell strings on the substrate and spaced apartfrom each other, a plurality of bit lines on the substrate, a pluralityof word lines on the substrate, and a control logic. Each of theplurality of cells strings may include a semiconductor layer and aresistance change layer on the substrate. Each of the plurality of cellstrings may include a plurality of memory cells stacked on top of eachother on a string selection transistor. Each memory cell of theplurality of memory cells, in a same cell string among the plurality ofcell strings, each may include a corresponding portion of thesemiconductor layer and a corresponding portion of resistance changelayer in the same cell string. Each of the bit lines may be connected toa corresponding one of the plurality of cell strings arranged in a samecolumn on the substrate. The plurality of bit lines may be configured toapply a read voltage to a select memory cell during a read operationusing a selected bit line among the plurality of bit lines. The selectmemory cell and a non-select memory cell may be among the plurality ofmemory cells on the substrate. Each of the plurality of word lines maybe connected to the plurality of memory cells at a same height among theplurality of cell strings arranged in a same row on the substrate. Thecontrol logic, in the read operation, may be configured to apply a firstvoltage to a non-select memory cell using an unselected word line amongthe plurality of word lines. The first voltage may have a level to turnon current only in the corresponding portion of the semiconductor layerof the non-select memory cell. The control logic, during the readoperation, may be configured to apply a second voltage to the selectmemory cell using a selected word line among the plurality of wordlines. The second voltage may have a level to turn on current in boththe corresponding portion of the semiconductor layer and thecorresponding portion of the resistance change layer of the selectmemory cell.

In some embodiments, the semiconductor layer may include a siliconmaterial.

In some embodiments, the resistance change layer may include one or moretransition metal oxides, one or more transition metal nitrides, or boththe one or more transition metal oxides and one or more transition metalnitrides.

In some embodiments, the corresponding portion of the semiconductorlayer and the corresponding portion of the resistance change layer, of asame memory cell among the plurality of memory cells, may have aparallel connection structure.

In some embodiments, the memory device may further include a commonsource line in the substrate. Two or more of the plurality of cellstrings may be on the common source line. Each of the plurality of cellstrings may further includes a gate insulating layer contacting a firstsurface of the semiconductor layer that is opposite a second surface ofthe semiconductor layer that directly contacts the resistance changelayer.

BRIEF DESCRIPTION OF THE DRAWINGS

The above and other aspects, features, and advantages of certainembodiments of the disclosure will be more apparent from the followingdescription taken in conjunction with the accompanying drawings, inwhich:

FIG. 1 is a block diagram of a memory system according to an embodiment;

FIG. 2 is a block diagram illustrating an implementation of a memorydevice of FIG. 1;

FIG. 3 is a block diagram of a memory cell array according to FIG. 1;

FIG. 4 is a diagram illustrating an equivalent circuit corresponding toa memory block according to an embodiment;

FIG. 5 is a diagram of a physical structure corresponding to a memoryblock according to an embodiment;

FIG. 6A is a cross-sectional view of an XZ plane of the memory block ofFIG. 5;

FIG. 6B is a cross-sectional view of a YZ plane of the memory block ofFIG. 5;

FIG. 7 is a diagram of an equivalent circuit of the memory block of FIG.4 in a program mode of a nonvolatile memory device according to anembodiment;

FIGS. 8A and 8B are diagrams illustrating a current movement in aresistance change layer in a program mode according to an embodiment;

FIG. 9 is a diagram of a circuit in a read mode of a memory blockaccording to an embodiment;

FIG. 10 is a diagram illustrating a current movement in a select memorycell in a read mode according to an embodiment;

FIG. 11A is a diagram showing a resistance distribution when a currentflows only in a resistance change layer; and

FIG. 11B is a diagram showing a resistance distribution when a currentflows through a resistance change layer and a semiconductor layer.

DETAILED DESCRIPTION

Reference will now be made in detail to embodiments, examples of whichare illustrated in the accompanying drawings, wherein like referencenumerals refer to like elements throughout. In this regard, the presentembodiments may have different forms and should not be construed asbeing limited to the descriptions set forth herein. Accordingly, theembodiments are merely described below, by referring to the figures, toexplain aspects. As used herein, the term “and/or” includes any and allcombinations of one or more of the associated listed items. Expressionssuch as “at least one of,” when preceding a list of elements, modify theentire list of elements and do not modify the individual elements of thelist.

The phrases “in some embodiments” or “in one embodiment” appearing invarious places in the specification are not necessarily all referring tothe same embodiment.

Some embodiments of the present disclosure may be represented byfunctional block configurations and various processing steps. Some orall of these functional blocks may be realized in various numbers ofhardware and/or software configurations that perform particularfunctions. For example, the functional blocks of the present disclosuremay be realized by one or more microprocessors or by circuitconfigurations for a given function. Also, for example, the functionalblocks of the present disclosure may be realized in various programmingor scripting languages. The functional blocks may be realized inalgorithms executing on one or more processors. Also, the presentdisclosure may employ the prior art for electronic environmentconfiguration, signal processing, and/or data processing. Terms, such as“mechanism”, “element”, “means” and “configuration” may be widely usedand are not limited to mechanical and physical configurations.

Also, connecting lines or connecting members between components shown inthe drawings are merely illustrative of functional connections and/orphysical or circuit connections. In an actual device, the connectionsbetween components may be represented by various functional connections,physical connections, or circuit connections that are replaceable oradded.

It will be understood that the term “comprise” or “include” should notbe construed as necessarily including various constituent elements andvarious operations described in the specification, and also should notbe construed that portions of the constituent elements or operations ofthe various constituent elements and various operations may not beincluded or additional constituent elements and operations may furtherbe included.

It will also be understood that when an element is described using anexpression “above” or “on”, the position of the element may include notonly the element being “immediately on/under/left/right in a contactmanner” but also being “on/under/left/right in a non-contact manner”.Hereinafter, only embodiments will be described in detail with referenceto the accompanying drawings.

Terms, such as first and second may be used to describe variouscomponents, but the components should not be limited by the terms. Theterms are used only to distinguish one component from another.

Hereinafter, the present disclosure will be described in detail withreference to the accompanying drawings.

FIG. 1 is a block diagram of a memory system 10 according to anembodiment.

Referring to FIG. 1, the memory system 10 may include a memorycontroller 100 and a memory device 200. The memory controller 100 mayperform a control operation with respect to the memory device 200, and,as an example, the memory controller 100 may perform read and eraseoperations of a program (or write) with respect to the memory device 200by providing an address ADD and a command CMD to the memory device 200.Also, data for operating a program and read data may be transmitted andreceived between the memory controller 100 and the memory device 200.

The memory device 200 may include a memory cell array 210 and a voltagegenerator 220. The memory cell array 210 may include a plurality ofmemory cells disposed in regions where a plurality of word lines and aplurality of bit lines cross each other. The memory cell array 210 mayinclude nonvolatile memory cells that non-volatilely store data, and asnonvolatile memory cells, the memory cell array 210 may include flashmemory cells, such as a NAND flash memory cell array or a NOR flashmemory cell array, etc. Hereinafter, an example where the memory cellarray 210 includes a flash memory cell array is described. Accordingly,embodiments according to the present disclosure will be described indetail assuming that the memory device 200 is a nonvolatile memorydevice.

The memory controller 100 may include a write/read controller 110, avoltage controller 120, and a data determiner 130. In exampleembodiments, the memory controller 100 may include processing circuitrysuch as hardware including logic circuits; a hardware/softwarecombination such as a processor executing software; or a combinationthereof. For example, the processing circuitry more specifically mayinclude, but is not limited to, a central processing unit (CPU), anarithmetic logic unit (ALU), a digital signal processor, amicrocomputer, a field programmable gate array (FPGA), a System-on-Chip(SoC), a programmable logic unit, a microprocessor, application-specificintegrated circuit (ASIC), etc. The memory controller 100 may operate inresponse to requests from a host (not shown) and may be configured toaccess the memory device 200 and control operations discussed below,thereby transforming the memory controller 100 into a special purposecontroller. As discussed below, the memory controller 100 may improvethe functioning of the memory device 200 by reducing a distribution ofresistance states in the memory device 200 for a read operation.

The write/read controller 110 may generate an address ADD and a commandCMD for performing a program/read and erase operation with respect tothe memory cell array 210. Also, the voltage controller 120 may generatea voltage control signal for controlling at least one voltage level usedin the nonvolatile memory device 200. As an example, the voltagecontroller 120 may read data from the memory cell array 210 or generatea voltage control signal for controlling a voltage level of a word linefor programming data in the memory cell array 210.

The data determiner 130 may perform a determination operation withrespect to the data read from the memory device 200. For example, thenumber of on-cells and/or off-cells among the memory cells may bedetermined by determining the data read from the memory cells. As anexample of operation, when a program is performed with respect to aplurality of memory cells, a state of data of the memory cells may bedetermined by using a desired and/or alternatively predetermined readvoltage, and thus, it may be determined whether the program is normallycompleted with respect to all cells.

The memory device 200 may include the memory cell array 210 and thevoltage generator 220. As described above, the memory cell array 210 mayinclude nonvolatile memory cells, and as an example, the memory cellarray 210 may include flash memory cells. Also, the flash memory cellsmay be realized in various forms, for example, the memory cell array 210may include three-dimensional (or vertical) NAND (VNAND) memory cells.

FIG. 2 is a block diagram illustrating an implementation of the memorydevice of FIG. 1.

As depicted in FIG. 2, the memory device 200 may further include a rowdecoder 230, an input/output circuit 240, and a control logic 250.

The memory cell array 210 may be connected to at least one string selectline SSL, a plurality of word lines WLs (WL1 through WLm, normal wordlines WLs, and dummy word lines WLs), and at least one common cell CSL,and also, may be connected to a plurality of bit lines BL1 through BLn.The voltage generator 220 may generate at least one word line voltage,for example word line voltages V1 through Vi, and the word line voltagesV1 through Vi may be provided to the row decoder 230. A signal forperforming a program/read/erase operation may be applied to the memorycell array 210 through the bit lines.

Also, data to be programmed may be provided to the memory cell array 210through the input/output circuit 240, and the read data may be providedto the outside (for example, a memory controller) through theinput/output circuit 240. In example embodiments, the control logic 250may include processing circuitry such as hardware including logiccircuits; a hardware/software combination such as a processor executingsoftware; or a combination thereof. For example, the processingcircuitry more specifically may include, but is not limited to, acentral processing unit (CPU), an arithmetic logic unit (ALU), a digitalsignal processor, a microcomputer, a field programmable gate array(FPGA), a System-on-Chip (SoC), a programmable logic unit, amicroprocessor, application-specific integrated circuit (ASIC), etc. Thecontrol logic 250 may operate in response to requests from memorycontroller 100 (see FIG. 1) and the control logic 250 may providevarious control signals related to a memory operation to the row decoder230 and the voltage generator 220, thereby transforming the controllogic 250 into a special purpose control logic. As discussed below, thecontrol logic 250 may improve the functioning of the memory device 200by reducing a distribution of resistance states in the memory device 200for a read operation.

According to the decoding operation of the row decoder 230, the wordline voltages V1 through Vi may be provided to the various lines WLs(SSLs, WL1 through WLm, and CSLs). For example, the word line voltagesV1 through Vi may include a string select voltage, a word line voltage,and a ground select voltage, the string select voltage may be providedto at least one string select line SSs, the word line voltage may beprovided to at least one word line WL, and a ground select voltage maybe provided to at least one common source line CSL.

FIG. 3 is a block diagram of the memory cell array 210 according to FIG.1.

Referring to FIG. 3, the memory cell array 210 includes a plurality ofmemory blocks BLK1 through BLKz. Each memory block BLK has athree-dimensional structure (or a vertical structure). For example, eachmemory block BLK includes structures extending in first through thirddirections. For example, as discussed with reference to FIG. 4, eachmemory block BLK includes a plurality of cell strings CSs extending in asecond direction. For example, a plurality of cell strings CSs may beprovided in first and third directions.

Each cell string CS is connected to a bit line BL, a string select lineSSL, word lines WLs, and a common source line CSL. That is, each of thememory blocks BLK1 through BLKz may be connected to a plurality of bitlines BLs, a plurality of string select lines SSLs, a plurality of wordlines WLs, and a plurality of common source lines CSLs. The memoryblocks BLK1 through BLKz will be described in further detail withreference to FIG. 4.

FIG. 4 is a diagram illustrating an equivalent circuit corresponding toa memory block BLKi according to an embodiment. For example, one of thememory blocks BLK1 through BLKz of the memory cell array 210 of FIG. 3is depicted in FIG. 4.

Referring to FIGS. 3 and 4, the memory block BLKi includes a pluralityof cell strings CLs. The plurality of cell strings CSs may form rows andcolumns by being arranged in a row direction and a column direction.

Each cell string CS11 through CSkn includes memory cells Mcs and astring select transistor SST. The memory cells Mcs and the string selecttransistors SST of each cell string CS may be stacked in a heightdirection.

Rows of the plurality of cell strings CSs are respectively connected todifferent string select lines SSL1 through SSLk. For example, the stringselect transistors SSTs of the cell strings CS11 through CS1 n arecommonly connected to the string select line SSL1. The string selecttransistors SSTs of the cell strings CSk1 through CSkn are commonlyconnected to the string select line SSLk.

Columns of the plurality of cell strings CSs are respectively connectedto different bit lines BL1 through BLn. For example, the memory cellsand the string select transistors SSTs of the cell strings CS11 throughCSk1 may be commonly connected to the bit line BL1, and the memory cellsand the string select transistors SSTs of the cell strings CS1 n throughCSkn may be commonly connected to the bit line BLn.

Rows of the cell strings CSs may be respectively connected to differentcommon source lines CSL1 through CSLk. For example, the string selecttransistors SSTs of the cell strings CS11 through CS1 n may be commonlyconnected to a common source line CSL1, and the string selecttransistors SSTs of the cell strings CSk1 through CSkn may be commonlyconnected to the common source line CSLk.

Memory cells located at the same height from a substrate (or the stringselect transistors SSTs) are commonly connected to a same word line WL,and memory cells located at different heights are respectively connectedto word lines WL1 through WLm different from each other.

The memory block BLKi shown in FIG. 4 is an example. The technicalspirit of the present disclosure is not limited to the memory block BLKiillustrated in FIG. 4. For example, the number of rows of the cellstrings CSs may be increased or decreased. As the number of rows of thecell strings CSs is changed, the number of string select lines connectedto the rows of the cell strings CSs and the number of cell strings CSsconnected to one bit line may also be changed. As the number of rows ofthe cell strings CSs is changed, the number of common source linesconnected to the rows of the cell strings CSs may also be changed.

The number of columns of the cell strings CSs may be increased ordecreased. As the number of columns of the cell strings CSs is changed,the number of bit lines connected to the columns of the cell strings CSsand the number of cell strings CSs connected to one string select linemay also be changed.

The heights of the cell strings CSs may be increased or decreased. Forexample, the number of memory cells stacked in each of the cell stringsCSs may be increased or decreased. As the number of memory cells stackedin each of the cell strings CSs is changed, the number of word lines WLmay also be changed. For example, the string select transistor providedto each of the cell strings CSs may be increased. As the number ofstring select transistors provided to each of the cell strings CSs ischanged, the number of string select lines or a common source line mayalso be changed. When the number of string select transistors increases,the string select transistors may be stacked in the same form as memorycells MCs.

For example, writing and reading may be performed in units of rows ofcell strings CSs. The cell strings CSs may be selected in units of rowsby the common source lines CSLs, and the cell strings CSs may beselected in units of rows by the string select lines SSLs. Also, avoltage may be applied to the common source lines CSLs in a unit of atleast two common source lines. A voltage may be applied to all of thecommon source lines CSLs as one unit.

In the selected row of the cell strings CSs, writing and reading may beperformed in units of pages. A page may be one row of memory cellsconnected to a same word line WL. In the selected row of the cellstrings CSs, the memory cells may be selected in units of pages by theword lines WLs.

Meanwhile, each of the memory cells MCs may correspond to a circuit inwhich a transistor and a resistor are connected in parallel.

FIG. 5 is a diagram of a physical structure corresponding to a memoryblock according to an embodiment, FIG. 6A is a cross-sectional view ofan XZ plane of the memory block of FIG. 5, and FIG. 6B is across-sectional view of a YZ plane of the memory block of FIG. 5.

Referring to FIGS. 5, 6A, and 6B, a substrate 501 is provided. As anexample, the substrate 501 may include a silicon material doped with afirst type dopant. For example, the substrate 501 may include a siliconmaterial doped with a p-type dopant. For example, the substrate 501 maybe a p-type well (for example, a pocket p well). Hereinafter, thesubstrate 501 is assumed as p-type silicon. However, the substrate 501is not limited to p-type silicon.

A doped region 510 is provided on the substrate 501. For example, thedoped region 510 may have a second type dopant that is different fromthe substrate 501. For example, the doped region 510 may be an n-type.Hereinafter, the doped region 510 is assumed as an n-type. However, thedoped region 510 is not limited to an n-type. The doped region 510 maybe a common source line.

A plurality of gates 531 and a plurality of insulating layers 532extending in a horizontal direction may be alternately arranged on thesubstrate 501. That is, the plurality of gates 531 and the plurality ofinsulating layers 532 may be stacked crossing each other in a verticaldirection perpendicular to the horizontal direction. For example, thegate 531 may include at least one of a metal material (for example,copper, silver, etc.) and highly doped silicon, and the plurality ofinsulating layers 532 may include silicon oxide, but is not limitedthereto. Each gate 531 is connected to one of a word line WL and astring select line SSL.

A pillar 520 that vertically penetrates the plurality of gates 531 andthe plurality of insulating layers 532, which are alternately arranged,is provided.

The pillar 520 may include a plurality of layers. In one embodiment, theoutermost layer of the pillar 520 may be a gate insulating layer 521.For example, the gate insulating layer 521 may include silicon oxide.The gate insulating layer 521 may be conformally deposited on the pillar520.

Also, a semiconductor layer 522 may be conformally deposited along aninner surface of the gate insulating layer 521. In one embodiment, thesemiconductor layer 522 may include a silicon material doped with thefirst type dopant. The semiconductor layer 522 may include a siliconmaterial doped with the same type as the substrate 501, and, forexample, when the substrate 501 includes a silicon material doped with ap-type dopant, the semiconductor layer 522 may also include a siliconmaterial doped with a p-type dopant. Alternatively, the semiconductorlayer 522 may also include materials such as Ge, IGZO, GaAs, etc.

A resistance change layer 523 may be disposed along an inner surface ofthe semiconductor layer 522. The resistance change layer 523 may bedisposed in contact with the semiconductor layer 522 and conformallydeposited on the semiconductor layer 522. In one embodiment, theresistance change layer 523 may include a material in which a resistancevaries according to an applied voltage. The resistance change layer 523may change from a high resistance state to a low resistance state orfrom a low resistance state to a high resistance state according to avoltage applied to the gate 531. The above resistance change may be aphenomenon due to oxygen vacancies of the resistance change layer 523 ora phenomenon due to a change in a current conduction mechanism bytrapping/detrapping of electrons of the resistance change layer 523.

The resistance change layer 523 may include a transition metal oxideand/or a transition metal nitride. In detail, the resistance changelayer 523 may include an oxide of at least one element selected from thegroup consisting of zirconium (Zr), hafnium (Hf), aluminum (Al), nickel(Ni), copper (Cu), molybdenum (Mo), tantalum (Ta), titanium (Ti),tungsten (W), chromium (Cr), strontium (Sr), lanthanum (La), manganese(Mn), calcium (Ca), praseodymium (Pr), and silicon (Si). Also, theresistance change layer 523 may include silicon nitride and aluminumnitride.

Also, an insulating layer 524 may be filled in the resistance changelayer 523. For example, the insulating layer 524 may include siliconoxide.

The semiconductor layer 522 and the resistance change layer 523 may bein contact with the doped region 510, that is, a common source region.

A drain 540 may be provided on pillar 520. The drain 540 may include asilicon material doped with a second type dopant. For example, the drain540 may include a silicon material doped with an n-type dopant.

A bit line 550 may be provided on the drain 540. The drain 540 and thebit line 550 may be connected through contact plugs. The bit line 550may include a metal material, for example, the bit line 550 may includepolysilicon. The conductive material may be a bit line.

Meanwhile, when compared with FIG. 4, the plurality of gates 531, theplurality of insulating layers 532, the gate insulating layer 521, thesemiconductor layer 522, and the resistance change layer 523 areconstituent elements of the cell strings CSs. In detail, the gate 531,the gate insulating layer 521, and the semiconductor layer 522 may besome constituent elements of the transistor, and the resistance changelayer 523 may be a resistor.

As depicted in the drawings, the semiconductor layer 522 and theresistance change layer 523 of the transistor are directly connected toeach other so that the resistance change layer 523 may have a highresistance state or a low resistance state, and thus, ‘0’ and ‘1’ may berecorded in the memory cell MC. In each memory cell MC, thesemiconductor layer 522 and the resistance change layer 523 of thetransistor are connected in parallel, and the parallel structure iscontinuously arranged in a vertical direction, and thus, the cell stringCS is formed. Also, the common source line 510 and the bit line 550respectively may be connected to both ends of the cell string CS. Also,a voltage may be applied to the common source line 510 and the bit line550, and thus, processes of programing, reading, and erasing may beperformed in the plurality of memory cells MCs.

According to the present disclosure, instead of constructing a memoryblock by using a phase change material, the memory block is formed usingthe resistance change layer 523, and thus, the problem of generatingheat and stress (pressure) caused by using a phase change material maybe limited and/or solved. Also, by configuring and operating a memoryblock as described above, even when repeatedly operating memory cellsincluded in the memory block, ion movement between adjacent memorycells, a leakage current as a result of the ion movement, and anoperation failure may be limited and/or prevented. Also, the memoryblock according to the present disclosure may solve a scaling issuebetween memory cells in a next-generation VNAND, and thus, integrationdensity may be dramatically increased.

Meanwhile, the memory block according to the present disclosure may berealized in a chip form and used as a neuromorphic computing platform.Also, the block according to the present disclosure may be realized in achip form and used to construct a neural network.

Meanwhile, the memory controller 100 may control the memory device 200to be operated in a program mode.

FIG. 7 is a diagram of an equivalent circuit of the memory block of FIG.4 in a program mode of a nonvolatile memory device according to anembodiment.

Each of a plurality of memory cells 710 and 720 of FIG. 7 may includethe gate 531, the gate insulating layer 521, the resistance change layer523, and the semiconductor layer 522 of FIG. 5.

Each of a plurality of memory cells 710 and 720 may include a selectmemory cell 710 and a non-select memory cell 720. The program mode of anonvolatile device may denote a mode in which a program operation isperformed on a memory cell included in a memory block, and the selectmemory cell 710 may denote a memory cell that is a target of the programoperation.

Referring to FIGS. 1, 2, and 7, the control logic 250 may apply aturn-on voltage Von to a string select line SSL connected to the selectmemory cell 710 among a plurality of string select lines SSLs. Thecontrol logic 250 applies the turn-on voltage Von to a word line WLconnected to the non-select memory cells 720 among a plurality of wordlines WLs, and the control logic 250 may apply a turn-off voltage Voffto the word line WL connected to the select memory cell 710 among theplurality of word lines WLs. Here, the turn-on voltage Von is a voltagehaving a magnitude to turn-on a transistor, and may be referred to as avoltage that turns-on only the semiconductor layer of the transistor.The turn-off voltage Voff is a voltage having a magnitude to turn-offthe transistor and may be referred to as a voltage that limits and/orprevents current from flowing in the semiconductor layer of thetransistor. The magnitude of the turn-on voltage Von and the turn-offvoltage Voff may vary according to type, thickness, etc. of a materialthat forms the gate 531, the gate insulating layer 521, thesemiconductor layer 522, and the resistance change layer 523, which forma plurality of memory cells MC. In general, an absolute value of theturn-on voltage Von may be greater than an absolute value of theturn-off voltage Voff.

A program voltage Vprogram may be applied to a bit line BL connected tothe select memory cell 710 among a plurality of bit lines BLs. Theprogram voltage Vprogram may be provided from the outside, for example,the memory controller 100 through the input/output circuit 240. Theprogram voltage Vprogram is a voltage for writing data in the memorycell MC and may have a different magnitude depending on the data.

Among the plurality of bit lines BLs, the bit line BL that is notconnected to the select memory cell 710 may be grounded or floated.Since the bit line BL that is not connected to the select memory cell710 is grounded or floated, power loss due to a leakage current may belimited and/or prevented. As a result, the control logic 250 may performa program operation on the select memory cell 710.

In a program mode, as a turn-on voltage Von is applied to the non-selectmemory cell 720, the semiconductor layer 522 of the non-select memorycell 720 has a conductor characteristic, and as a turn-off voltage Voffis applied to the select memory cell 710, the semiconductor layer 522 ofthe select memory cell 710 has an insulating characteristic. Thus, avoltage difference according to a program voltage Vprogram occurs in theselect memory cell 710. The resistance change layer 523 of the selectmemory cell 710 may be in a low resistance state as oxygen vacanciesmove toward the semiconductor layer 522 due to a voltage difference ofthe select memory cell 710. The low resistance state of the resistancechange layer 523 of the select memory cell 710 may denote that a valueof resistance in the select memory cell 710 is reduced. The selectmemory cell 710 may have an ohmic conduction characteristic in the lowresistance state of the resistance change layer 523.

FIGS. 8A and 8B are diagrams illustrating a current movement in aresistance change layer 523 in a program mode according to anembodiment.

As shown in FIGS. 6A and 8A, a memory block may include the gate 531(e.g., 531 a, 531 b), the insulating layers 532, the gate insulatinglayer 521, the semiconductor layer 522 (e.g., 522 a, 522 b), theresistance change layer 523 (e.g., 523 a, 523 b), and the insulatinglayer 524 on a substrate (not shown). The gate insulating layer 521, thesemiconductor layer 522, the resistance change layer 523, and theinsulating layer 524 may extend in a first direction. The gate 531 andthe insulating layers 532 may alternately extend in a second directionperpendicular to the first direction.

Meanwhile, the gate 531, the gate insulating layer 521, and thesemiconductor layer 522 may be constituent elements of a transistor, andthe resistance change layer 523 may correspond to a resistor.

In a program mode, the control logic 250 (see FIG. 2) may apply aturn-on voltage Von to a gate 531 b of a non-select memory cell andapply a turn-off voltage Voff to a gate 531 a of a select memory cell.Thus, a semiconductor layer 522 b corresponding to the gate 531 b of thenon-select memory cell may have a conductor characteristic, and asemiconductor layer 522 a corresponding to the gate 531 a of the selectmemory cell may have an insulating characteristic. As a program voltageVprogram is applied to a bit line electrically connected to the selectmemory cell 710, a voltage difference occurs in the resistance changelayer 523 a corresponding to the select memory cell 710.

The voltage difference directs oxygen vacancies in the resistance changelayer 523 a corresponding to the select memory cell 710 in a directiontoward the semiconductor layer 522 a. As depicted in FIG. 8A, when thedensity of oxygen vacancies is high in a region close to thesemiconductor layer 522 a of the resistance change layer 523 a, aconductive filament may be formed. Thus, the resistance change layer 523a may be in a low resistance state and the select memory cell 710 mayhave ohmic conduction characteristics.

Alternatively, as depicted in FIG. 8B, when density of oxygen vacanciesis low in a region close to the semiconductor layer 522 a of theresistance change layer 523 a, electrons are filled in a trap spacedapart by a desired and/or alternatively predetermined distance from theresistance change layer 523 a. Thus, the resistance change layer 523 ais in a low resistance state due to the change in a current conductionshape, and the select memory cell 710 may have a bulk conductioncharacteristic, such as Hopping, space charge limited current (SCLC),and Poole-Frenkel.

As a result, a program operation may be performed on the select memorycell 710 by changing the resistance state of the resistance change layer523 a of the select memory cell 710 in response to a program voltageVprogram.

On the other hand, the resistance state of the resistance change layer523 a generally has a distribution on a logarithmic scale. Thus, a ratioof the highest resistance to the lowest resistance of the resistancechange layer 523 a may be large, and the deviation may also be large.The resistance change of the resistance change layer 523 may be outsidethe limit of the dynamic range of a sense amplifier that senses aresistance. Thus, it is difficult to connect the sense amplifier to amemory cell or a memory device.

FIG. 9 is a diagram of a circuit in a read mode of a memory blockaccording to an embodiment. Referring to FIG. 9, each of a plurality ofmemory cells 810 and 820 included in a memory block may include the gate531, the gate insulating layer 521, the semiconductor layer 522, and theresistance change layer 523 of FIG. 5.

Each of a plurality of memory cells 810 and 820 included in a memoryblock 800 may include a select memory cell 810 and a non-select memorycell 820. A read mode of a nonvolatile device may denote a mode in whicha read operation is performed on a memory cell included in a memoryblock, and the select memory cell 810 may denote a memory cell that is atarget of a read operation.

In a read mode, the control logic 250 may apply a turn-on voltage Von toa string select line SSL connected to the select memory cell 810 among aplurality of string select lines SSLs and may apply a turn-on voltageVon to a word line WL connected to the non-select memory cells 820 amonga plurality of word lines WLs. Here, the turn-on voltage Von may be avoltage having a magnitude to turn-on a transistor and may be referredto as a voltage for turning-on only the semiconductor layer 522 of thetransistor. The turn-off voltage Voff is a voltage having a magnitude toturn-off a transistor and may be referred to as a voltage to limitand/or prevent a current from flowing through the semiconductor layer522 of the transistor. A value of the turn-on voltage Von and theturn-off voltage Voff may vary according to type, thickness, etc. of amaterial that forms the gate 531, the gate insulating layer 521, thesemiconductor layer 522, and the resistance change layer 523, which forma plurality of memory cells MC. In general, an absolute value of theturn-on voltage Von may be greater than an absolute value of theturn-off voltage Voff.

Meanwhile, the control logic 250 may apply a current-on voltage Vion toa word line WL connected to the select memory cell 710. The current-onvoltage Vion may denote a voltage having a magnitude that allows acurrent to flow through both the semiconductor layer 522 and theresistance change layer 523 of the transistor included in the selectmemory cell 710. An absolute value of the current-on voltage Vion may begreater than an absolute value of the turn-off voltage Voff and lessthan an absolute value of the turn-on voltage Von. A value of thecurrent-on voltage Vion may vary according to type, thickness, etc. of amaterial that forms the gate 531, the gate insulating layer 521, thesemiconductor layer 522, and the resistance change layer 523, which forma plurality of memory cells MC. In particular, the current-on voltageVion may have a magnitude so that a resistance distribution of theselect memory cell 810 has a linear scale.

Also, a read voltage Vread may be applied to a bit line BL connected tothe select memory cell 810 among a plurality of bit lines BLs. The readvoltage Vread may be provided from the outside, for example, the memorycontroller 100, through the input/output circuit 240. The read voltageVread may be a voltage for reading data written in the select memorycell 810. In addition, a bit line BL that is not connected to the selectmemory cell 810 among a plurality of bit lines BLs may be grounded orfloated. Thus, a read operation with respect to the select memory cell810 may be performed.

FIG. 10 is a diagram illustrating a current movement in the selectmemory cell 810 in a read mode according to an embodiment.

In a read mode, since a read voltage Vread is applied to a bit line BLconnected to the select memory cell 810 and a turn-on voltage Von isapplied to the non-select memory cell 820, a semiconductor layer 522 dof the non-select memory cell 820 has a conductor characteristic. Thus,a read current Iread flows through the semiconductor layer 522 d of thenon-select memory cell 820. However, since a current-on voltage Vion isapplied to the select memory cell 810, a read current may flow throughboth a semiconductor layer 522 c and a resistance change layer 523 c ofthe select memory cell 810.

Here, the current-on voltage Vion may have a magnitude so that aresistance of the semiconductor layer 522 c is in a range similar tothat of the resistance change layer 523 c. The magnitude of thecurrent-on voltage Vion may be such that a resistance of thesemiconductor layer 522 c corresponding to the select memory cell 810 isequal to or greater than a minimum resistance of a resistance changelayer 523 c corresponding to the select memory cell 810 or a resistanceof the semiconductor layer 522 c corresponding to the select memory cell810 is equal to or less than a maximum resistance of the resistancechange layer 523 c corresponding to the select memory cell 810.Alternatively, when the resistance of the resistance change layer 523 cis in a range of 10⁴Ω to 10¹²Ω, the magnitude of the current-on voltageVion may be in a range so that the resistance range of the semiconductorlayer 522 c is also in a range of 10⁴Ω to 10¹²Ω. Alternatively, themagnitude of the current-on voltage Vion may be such that a ratio of themaximum value with respect to a minimum value of a composite resistanceof the semiconductor layer 522 c and the resistance change layer 523 cof the select memory cell may be 10 or less. Thus, a total resistance ofthe select memory cell 810 may be determined as a parallel resistance ofthe resistance of the semiconductor layer 522 c and the resistance ofthe resistance change layer 523 c.

Since the total resistance of the select memory cell 810 is determinedby the resistance of the parallel connection of the semiconductor layer522 c and the resistance change layer 523 c, even if the resistancestate of the resistance change layer 523 c is a logarithmic scale, theoverall resistance of the select memory cell 810 may have a linear scaledistribution. In this way, the uniformity of the resistance state withrespect to a memory cell may be improved and a certain range of currentmay be outputted from the select memory cell 710, and thus, theconnection of a memory cell to a sense amplifier sensing the selectmemory cell 810 may be increased.

FIG. 11A is a graph showing a resistance distribution when a currentflows only in the resistance change layer 523 c, and FIG. 11B is a graphshowing a resistance distribution when a current flows through theresistance change layer 523 c and the semiconductor layer 522 c. FIG.11A illustrates a resistance distribution of resistance average valuesof 10 kΩ, 30 kΩ, 100 kΩ, and 1 MΩ having a normally formed randomdistribution based on an understanding with respect to a resistancechange phenomenon of the resistance change layer 523 c. The standarddeviation of each of the above average values of resistance also shows 1kΩ, 3 kΩ, 10 kΩ, and 100 kΩ logarithmic scale distributions.

Meanwhile, it is assumed that the semiconductor layer 522 c has aresistance value of about 10 kΩ in the read mode. Since thesemiconductor layer 522 c and the resistance change layer 523 c areformed in a parallel circuit, the distribution of the compositeresistance is as shown in FIG. 11B. Due to the presence of parallelresistors, it may be confirmed that an average value of each of thecomposite resistors is about 8.5 kΩ, 18.9 kΩ, 33.2 kΩ, and 47.60 and hasa linear scale distribution compared to the resistance change layer 523c. Also, it may be confirmed that each of the standard deviations isreduced to 0.6 kΩ, 1.2 kΩ, 1.1 kΩ, and 0.2 kΩ.

In a read operation, when a current is allowed to flow only in theresistance change layer 523 with the resistance distribution of FIG.11A, a ratio of the highest resistance to the lowest resistance of thememory cell may be about 100. However, when a current is allowed to flowthrough both the semiconductor layer 522 and the resistance change layer523, the memory cell may have a resistance distribution of FIG. 11B.Also, it may be confirmed that the ratio of the highest resistance tothe lowest resistance of the memory cell is reduced to about 5 to 6. Theconnection of the memory cell to the sense amplifier may be facilitatedby reducing the deviation of a signal outputted from the memory cell.

According to the present disclosure, a resistance value of a memory cellmay be distributed in a linear scale range by applying a voltage in arange in which both the resistance change layer and the semiconductorlayer are resistances to the memory cell of the nonvolatile memorydevice. This may improve the uniformity of a current output from thenonvolatile memory device. Also, the connection of the memory cell to adetection amplifier that detects a current of the nonvolatile memorydevice may be facilitated.

The foregoing descriptions of the present specification are examples,and thus, it will be understood by those skilled in the art that variouschanges in form and details may be made therein without departing fromthe spirit and scope of inventive concepts Therefore, it should beunderstood that the embodiments described above are non-limitingexamples in all respects and not restrictive. For example, eachcomponent described as a single type may be implemented in a distributedmanner, and similarly, components described as distributed may beimplemented in a combined form.

It should be understood that embodiments described herein should beconsidered in a descriptive sense only and not for purposes oflimitation. Descriptions of features or aspects within each embodimentshould typically be considered as available for other similar featuresor aspects in other embodiments. While one or more embodiments have beendescribed with reference to the figures, it will be understood by thoseof ordinary skill in the art that various changes in form and detailsmay be made therein without departing from the spirit and scope asdefined by the following claims.

What is claimed is:
 1. A memory device comprising: a memory cell arrayhaving a vertical stack-type structure including a semiconductor layerand a resistance change layer, the memory cell array including aplurality of memory cells that each include a corresponding portion ofthe semiconductor layer and a corresponding portion of the resistancechange layer; and a control logic, the control logic, in a readoperation, being configured to apply a first voltage to a non-selectmemory cell and the first voltage has a level to turn on current only inthe corresponding portion of the semiconductor layer of the non-selectmemory cell, the control logic, during the read operation, beingconfigured to apply a second voltage to a select memory cell and thesecond voltage has a level to turn on current in both the correspondingportion of the semiconductor layer and the corresponding portion of theresistance change layer of the select memory cell, and the non-selectmemory cell and the select memory cell being among the plurality ofmemory cells of the memory cell array; and a bit line connected to thememory cell array, the bit line being configured to apply a read voltageto the select memory cell during the read operation, wherein an absolutevalue of the second voltage is greater than an absolute value of a thirdvoltage, and the third voltage has a level to turn on current in thecorresponding portion of the resistance change layer of the selectmemory cell, based on the control logic applying the third voltage tothe select memory cell.
 2. The memory device of claim 1, wherein, thecontrol logic, in a program operation, is configured to apply the firstvoltage to the non-select memory cell to turn on current only in thecorresponding portion of the semiconductor layer of the non-selectmemory cell, and the control logic, in the program operation, isconfigured to apply the second voltage to the select memory cell to turnon current in both the corresponding portion of the semiconductor layerand the corresponding portion of the resistance change layer of theselect memory cell, and the bit line is configured to apply a programvoltage to the select memory cell during the program operation.
 3. Thememory device of claim 1, wherein the second voltage has a magnitude sothat the corresponding portion of the semiconductor layer of the selectmemory cell has a resistance magnitude in a range of 10⁴Ω through 10¹²Ω,based on the control logic applying the second voltage to the selectmemory cell.
 4. The memory device of claim 1, wherein the second voltagehas a magnitude so that a ratio of a maximum value to a minimum value ofa composite resistance of the corresponding portion of the semiconductorlayer and the corresponding portion of the resistance change layer ofthe select memory cell is 10 or less, based on the control logicapplying the second voltage to the select memory cell.
 5. The memorydevice of claim 1, wherein the second voltage has a magnitude so that aresistance of the corresponding portion of the semiconductor layercorresponding of the select memory cell is equal to or greater than aminimum resistance of the corresponding portion of the resistance changelayer of the select memory cell, based on the control logic applying thesecond voltage to the select memory cell.
 6. The memory device of claim1, wherein the second voltage has a magnitude so that a resistance ofthe corresponding portion of the semiconductor layer corresponding ofthe select memory cell is equal to or less than a maximum resistance ofthe corresponding portion of the resistance change layer correspondingto the select memory cell, based on the control logic applying thesecond voltage to the select memory cell.
 7. The memory device of claim1, wherein the corresponding portion of the semiconductor layer and thecorresponding portion of the resistance change layer of the selectmemory cell have a parallel connection structure.
 8. The memory deviceof claim 1, wherein the memory cell array includes: the semiconductorlayer extending in a first direction; a plurality of gates and aplurality of insulating layers extending in a second directionperpendicular to the first direction and alternately disposed to eachother; a gate insulating layer extending in the first direction betweenthe plurality of gates, the plurality of insulating layers, and thesemiconductor layer; and the resistance change layer extending in thefirst direction on the semiconductor layer.
 9. The memory device ofclaim 8, wherein the resistance change layer is spaced apart from thegate insulating layer with the semiconductor layer therebetween.
 10. Thememory device of claim 1, wherein the resistance change layer contactsthe semiconductor layer.
 11. The memory device of claim 1, wherein theresistance change layer includes a material in which a resistance ischanged by a phenomenon of oxygen vacancies or a current conductionmechanism by trap/detrap of electrons.
 12. The memory device of claim 1,wherein the resistance change layer includes one or more transitionmetal oxides, one or more transition metal nitrides, or both the one ormore transition metal oxides and one or more transition metal nitrides.13. A method of operating a non-volatile memory device, the methodcomprising: applying a first voltage to a non-select memory cell among aplurality of memory cells of a memory cell array, the memory cell arrayhaving a vertical stack-type structure including a semiconductor layerand a resistance change layer, each of the plurality of memory cellsincluding a corresponding portion of the semiconductor layer and acorresponding portion of the resistance change layer, and the firstvoltage having a level to turn on current only in the correspondingportion of the semiconductor layer of the non-select memory cell;applying a second voltage to a select memory cell among the plurality ofmemory cells of the memory cell array, the second voltage having a levelto turn on current in both the corresponding portion of thesemiconductor layer and the corresponding portion of the resistancechange layer of the select memory cell; and applying a read voltage tothe select memory cell of the memory cell array, wherein an absolutevalue of the second voltage is greater than a third voltage, and thethird voltage has a level to turn on current in the correspondingportion of the resistance change layer of the select memory cell of thememory cell array, based on applying the third voltage to the selectmemory cell.
 14. The method of claim 13, wherein the second voltage hasa magnitude so that a ratio of a maximum value to a minimum value of acomposite resistance of the corresponding portion of the semiconductorlayer and the corresponding portion of the resistance change layer ofthe select memory cell is 10 or less, based on applying the secondvoltage to the select memory cell.
 15. The method of claim 13, whereinthe second voltage has a magnitude so that a resistance of thecorresponding portion of the semiconductor layer of the select memorycell is equal to or greater than the minimum resistance of thecorresponding portion of the resistance change layer of the selectmemory cell, based on applying the second voltage to the select memorycell.
 16. The method of claim 13, wherein the corresponding portion ofthe semiconductor layer and the corresponding portion of the resistancechange layer of the selected memory cell have a parallel connectionstructure.
 17. A memory device comprising: a substrate; a plurality ofcell strings on the substrate and spaced apart from each other, each ofthe plurality of cells strings including a semiconductor layer and aresistance change layer on the substrate, each of the plurality of cellstrings including a plurality of memory cells stacked on top of eachother on a string selection transistor, each memory cell of theplurality of memory cells in a same cell string among the plurality ofcell strings each including a corresponding portion of the semiconductorlayer and a corresponding portion of resistance change layer in the samecell string; a plurality of bit lines on the substrate, each of the bitlines being connected to a corresponding one of the plurality of cellstrings arranged in a same column on the substrate, the plurality of bitlines being configured to apply a read voltage to a select memory cellduring a read operation using a selected bit line among the plurality ofbit lines, the select memory cell and a non-select memory cell beingamong the plurality of memory cells on the substrate; a plurality ofword lines on the substrate, each of the plurality of word lines beingconnected to the plurality of memory cells at a same height among theplurality of cell strings arranged in a same row on the substrate; and acontrol logic, the control logic, in the read operation, beingconfigured to apply a first voltage to a non-select memory cell using anunselected word line among the plurality of word lines, the firstvoltage having a level to turn on current only in the correspondingportion of the semiconductor layer of the non-select memory cell, thecontrol logic, during the read operation, being configured to apply asecond voltage to the select memory cell using a selected word lineamong the plurality of word lines, the second voltage having a level toturn on current in both the corresponding portion of the semiconductorlayer and the corresponding portion of the resistance change layer ofthe select memory cell, wherein an absolute value of the second voltageis greater than an absolute value of a third voltage, and the thirdvoltage has a level to turn on current in the corresponding portion ofthe resistance change layer of the select memory cell, based on thecontrol logic applying the third voltage to the select memory cell.